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| 2SK3403 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3403 Switching Regulator Applications * * * * Low drain-source ON resistance: RDS (ON) = 0.29 (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.) Low leakage current: IDSS = 100 A (max) (VDSS = 450 V) Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 30 13 52 100 350 13 10 150 -55~150 Unit V V V A W mJ A mJ C C Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA 2-10S1B Weight: 1.5 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 1.25 83.3 Unit C/W C/W Note 1: Please use device on condition that the channel temperature is below 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 3.46 mH, RG = 25 W, IAR = 13 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. JEDEC JEITA TOSHIBA 2-10S2B Weight: 1.5 g (typ.) 1 2002-09-02 2SK3403 Electrical Characteristics (Tc = 25C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) iYfsi Ciss Crss Coss tr 10 V VGS 0V 10 9 ID = 6 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 mA, VDS = 0 V VDS = 450 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 6 A VDS = 10 V, ID = 6 A Min 3/4 30 3/4 450 550 3.0 3/4 3.0 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 0.29 5.8 1600 17 220 28 Max 10 3/4 100 3/4 5.0 0.4 3/4 3/4 3/4 pF Unit mA V mA V V W S 3/4 3/4 Output 3/4 3/4 3/4 ns Turn-on time Switching time Fall time ton 3/4 RL = 33.3 W VDD ~ 200 V 3/4 3/4 45 tf Duty < 1%, tw = 10 ms = 3/4 10 3/4 3/4 3/4 3/4 3/4 nC Turn-off time Total gate charge Gate-source charge Gate-drain charge toff Qg Qgs Qgd 56 34 19 15 VDD ~ 360 V, VGS = 10 V, ID = 13 A - 3/4 3/4 Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition 3/4 3/4 IDR = 13 A, VGS = 0 V IDR = 13 A, VGS = 0 V, dIDR/dt = 100 A/ms Min 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 300 3.4 Max 13 52 -1.7 3/4 3/4 Unit A A V ns mC Marking K3403 Lot Number Type Month (starting from alphabet A) Year (last number of the christian era) 2 2002-09-02 2SK3403 ID - VDS 10 Common source Tc = 25C Pulse test 15 6 7.0 20 10 7.5 7.25 16 15 10 8.5 ID - VDS 8.25 8 12 7.5 8 7 4 6.5 VGS = 6 V Common source Tc = 25C Pulse test 8 (A) ID Drain current 4 6.5 2 VGS = 6.0 V 0 0 Drain current ID 10 (A) 2 4 6 8 0 0 10 20 30 40 50 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 30 Common source VDS = 20 V Pulse test 10 VDS - VGS Common source Tc = 25C Pulse test (V) 8 (A) 20 ID VDS 25 Drain-source voltage 6 ID = 13 A 4 Drain current 10 100 Tc = -55C 2 6 3 0 3 6 9 12 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) iYfsi - ID (W) 50 10 Common source Tc = 25C Pulse test RDS (ON) - ID (S) Common source VDS = 20 V Pulse test 10 Tc = -55C 25 Forward transfer admittance Drain-source on resistance 100 RDS (ON) 1 iYfsi 1 VGS = 10 V 15 0.1 0.1 1 10 100 0.1 0.1 1 10 100 Drain current ID (A) Drain current ID (A) 3 2002-09-02 2SK3403 RDS (ON) - Tc 1.0 Common source 0.8 6 VGS = 10 V Pulse test ID = 13 A 100 Common source Tc = 25C Pulse test 10 IDR - VDS Drain-source on resistance RDS (ON) (W) 0.6 3 0.4 Drain reverse current IDR (A) 1 10 3 5 1 VGS = 0, -1 V -0.6 -0.8 -1 -1.2 0.2 0 -80 -40 0 40 80 120 160 0.1 0 -0.2 -0.4 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 6 Vth - Tc Common source VDS = 10 V ID = 1 mA Pulse test Gate threshold voltage Vth (V) 5 Ciss 1000 Capacitance C (pF) 4 100 Coss 3 2 Common 10 source VGS = 0 V f = 1 MHz Tc = 25C 1 0.1 1 10 Crss 1 0 -80 100 1000 -40 0 40 80 120 160 Case temperature Tc (C) Drain-source voltage VDS (V) PD - Tc 200 500 Dynamic input/output characteristics Common source ID = 13 A Tc = 25C Pulse test 20 (W) (V) 160 400 VDS 300 VDD = 90 V 16 PD VDS Drain power dissipation Drain-source voltage 360 200 VGS 180 8 80 40 100 4 0 0 40 80 120 160 200 0 0 10 20 30 40 0 50 Case temperature Tc (C) Total gate charge Qg (nC) 4 2002-09-02 Gate-source voltage 120 12 VGS (V) 2SK3403 rth - tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 3 1 0.5 0.3 Duty = 0.5 0.2 0.1 0.1 0.05 0.03 0.05 0.02 0.01 Single pulse PDM t T Duty = t/T Rth (ch-c) = 1.25C/W 10 m 100 m 1 10 0.01 10 m 100 m 1m Pulse width tw (S) Safe operating area 100 ID max (pulse) * 50 30 400 EAS - Tch (mJ) 1 ms * 10 Avalanche energy EAS ID max (continuous) 300 100 ms * (A) 200 5 3 Drain current ID 100 1 0.5 0.3 DC operation Tc = 25C 0 25 * Single nonrepetitive pulse 50 75 100 125 150 Channel temperature (initial) Tch (C) 0.1 0.05 0.03 3 Tc = 25C Curves must be derated linearly with increase in temperature. 10 30 100 VDSS max 300 1000 15 V -15 V BVDSS IAR VDD VDS Drain-source voltage VDS (V) Test circuit RG = 25 W VDD = 90 V, L = 3.46 mH AS = Wave form ae o 1 B VDSS / x L x I2 x c cB 2 - VDD / e VDSS o 5 2002-09-02 2SK3403 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-09-02 |
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